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CM800DZ-34H

800A Insulated Gate Bipolar Transistor with a 1700V Breakdown Voltage, N-Channel Configuration, and MODULE-10 Form Factor

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Overview of CM800DZ-34H

The CM800DZ-34H is a high-power IGBT module designed for use in various industrial applications requiring efficient power switching capabilities. This module combines multiple IGBTs and diodes in a single package, making it suitable for high-power systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • DC+: Positive DC supply
  • DC-: Negative DC supply
  • Gate1: Gate control for IGBT 1
  • Gate2: Gate control for IGBT 2
  • Gate3: Gate control for IGBT 3
  • Emitter1: Emitter for IGBT 1
  • Emitter2: Emitter for IGBT 2
  • Emitter3: Emitter for IGBT 3
  • Collector1: Collector for IGBT 1
  • Collector2: Collector for IGBT 2
  • Collector3: Collector for IGBT 3
  • Diode+: Positive terminal for diode
  • Diode-: Negative terminal for diode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CM800DZ-34H module for better understanding of its functionality.

Key Features

  • High Power Capability: The CM800DZ-34H offers high-power handling capacity, suitable for industrial power applications.
  • Integrated Design: Combines multiple IGBTs and diodes in a single module for simplified system integration.
  • Efficient Switching: Provides efficient power switching capabilities, minimizing power losses during operation.
  • Robust Construction: Built to withstand high currents and voltages, ensuring reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the CM800DZ-34H datasheet.

Application

  • Motor Drives: Ideal for use in motor drives and control systems requiring high-power switching.
  • Power Inverters: Suitable for power inverter applications where efficient power conversion is essential.
  • Industrial UPS Systems: Used in industrial uninterruptible power supply (UPS) systems for reliable power backup.

Functionality

The CM800DZ-34H module integrates multiple IGBTs and diodes to enable efficient power switching and control. It is designed to meet the high-power requirements of industrial applications, ensuring reliable and stable operation.

Usage Guide

  • Power Connections: Connect the DC+ and DC- terminals to the appropriate power supply voltages.
  • Gate Control: Use the gate terminals (Gate1, Gate2, Gate3) to control the switching of the IGBTs.
  • Diode Function: The diode terminals provide rectification functions in the module.

Frequently Asked Questions

Q: Is the CM800DZ-34H suitable for high-frequency switching applications?
A: The CM800DZ-34H is designed for high-power applications and may not be optimized for high-frequency switching. Consider consulting the datasheet for specific frequency-related specifications.

Equivalent

For similar functionalities, consider these alternatives to the CM800DZ-34H:

  • CM600DZ-34H: A lower power version of the CM800DZ-34H with similar integrated IGBT and diode design.
  • CM1200DZ-34H: A higher power variant offering increased current and voltage handling capabilities compared to the CM800DZ-34H.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Dual
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 2.6 V
Continuous Collector Current at 25 C 800 A Gate-Emitter Leakage Current 500 nA
Pd - Power Dissipation 6.2 kW Package / Case Module
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand Mitsubishi Electric Maximum Gate Emitter Voltage 20 V
Mounting Style SMD/SMT Product Type IGBT Modules
Series CM800 Factory Pack Quantity 2
Subcategory IGBTs Technology Si

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