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CM75DY-24H

75 A 1200 V N-CHANNEL IGBT

Inventory:7,190

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Overview of CM75DY-24H

The CM75DY-24H is a dual IGBT power module designed for high-power switching applications. It combines two Insulated Gate Bipolar Transistor (IGBT) chips and two freewheeling diodes in a single package, providing a compact and efficient solution for power electronics.

Pin Configuration

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCE: Collector-Emitter Voltage
  • VGE: Gate-Emitter Voltage
  • IC: Collector Current
  • VGEOF: Maximum Allowable Peak Gate Voltage
  • VCE(sat): Saturation Voltage
  • IF: Forward Current
  • TC: Case Temperature
  • VFM: Forward Voltage
  • DC: Continuous Collector Current
  • TVJ: Maximum Junction Temperature

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CM75DY-24H power module for a visual representation.

Key Features

  • Dual IGBT Configuration: Incorporates two IGBT chips and freewheeling diodes for efficient power switching.
  • High Power Handling: Capable of handling high current and voltage levels, making it suitable for high-power applications.
  • Low Saturation Voltage: The CM75DY-24H features low saturation voltage, reducing power loss during switching.
  • High Frequency Operation: Designed for high-frequency switching applications, enabling rapid power control.
  • Low Thermal Resistance: The module's design includes low thermal resistance for effective heat dissipation.

Note: For detailed technical specifications, please refer to the CM75DY-24H datasheet.

Application

  • Motor Drives: Ideal for motor control applications, such as motor drives and inverters.
  • Power Supplies: Suitable for use in high-power switching power supply units.
  • Renewable Energy Systems: Used in renewable energy systems for efficient power conversion and control.

Functionality

The CM75DY-24H power module integrates dual IGBT chips and freewheeling diodes to enable efficient and robust switching of high-power electrical loads. It is a reliable solution for power electronics applications requiring high current and voltage handling capabilities.

Usage Guide

  • Power Connections: Connect the collector, emitter, and gate terminals to the respective voltage and current sources based on the desired circuit configuration.
  • Control Signals: Apply appropriate gate voltages and currents to control the switching behavior of the IGBT modules.
  • Cooling: Ensure effective thermal management to dissipate the heat generated during high-power operation.

Frequently Asked Questions

Q: What is the maximum operating voltage for the CM75DY-24H?
A: The CM75DY-24H can handle maximum collector-emitter voltages of up to 1200V, depending on the specific configuration.

Q: Is the CM75DY-24H suitable for high-frequency switching applications?
A: Yes, the CM75DY-24H is designed for high-frequency operation and is suitable for rapid power control applications.

Equivalent

For similar functionalities, consider these alternatives to the CM75DY-24H:

  • FF150R12KT4: A high-power IGBT module from Infineon with comparable performance and features to the CM75DY-24H.
  • SKM75GB12T4: This dual IGBT module from Semikron offers similar power handling and switching characteristics to the CM75DY-24H.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IGBTMOD™ Package Bulk
Product Status Obsolete Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 75 A
Power - Max 600 W Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 75A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 15 nF @ 10 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Package / Case Module Supplier Device Package Module

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