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CM50DY-12H

Module with 50A N-Channel Transistor and 600V

Inventory:7,346

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Overview of CM50DY-12H

The CM50DY-12H is a dual IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. It features a high current rating and voltage capability, making it suitable for power electronic systems requiring robust switching capabilities.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C-): High-current collector connection
  • Emitter (E-): Emitter connection
  • G-: Gate connection for IGBT control
  • Collector (C+): High-current collector connection
  • Emitter (E+): Emitter connection
  • G+: Gate connection for IGBT control
  • VCE: Collector-Emitter voltage
  • IC: Continuous collector current
  • IF: Forward current rating

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CM50DY-12H IGBT module for a visual representation.

Key Features

  • Dual IGBT Module: Contains two IGBT units for high-power switching.
  • High Current and Voltage Rating: Capable of handling high currents and voltages in power applications.
  • Robust Design: Built to withstand high-power operation and switching stresses.
  • Low Saturation Voltage: Ensures efficient switching performance with low power dissipation.
  • Integrated Gate Drivers: Simplifies control interface for external circuitry.
  • Temperature Sensing: Includes built-in temperature sensing for protection against overheating.

Note: For detailed technical specifications, please refer to the CM50DY-12H datasheet.

Application

  • Industrial Motor Drives: Ideal for motor drive applications requiring high-power switching.
  • Power Inverters: Used in power inverter systems for converting DC to AC power efficiently.
  • Switching Power Supplies: Suitable for high-power switching power supply designs.

Functionality

The CM50DY-12H dual IGBT module facilitates high-power switching operations with its dual IGBT units and integrated features, making it a reliable choice for demanding power electronic applications.

Usage Guide

  • High-Power Connections: Connect the high-current collector and emitter connections according to the application requirements.
  • Gate Control: Use the gate connections to control the IGBT switching states effectively.
  • Temperature Monitoring: Monitor the temperature sensing feature to prevent overheating during operation.

Frequently Asked Questions

Q: Is temperature sensing important for the CM50DY-12H operation?
A: Yes, temperature sensing helps in maintaining the module's reliability by preventing thermal issues during operation.

Equivalent

For similar functionalities, consider these alternatives to the CM50DY-12H:

  • CM100DY-24H: A higher power dual IGBT module with increased current and voltage ratings.
  • FF600R12ME4: This is a high-performance IGBT module from Infineon, offering comparable features to the CM50DY-12H.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IGBTMOD™ Packaging Bulk
Part Status Obsolete Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 50 A
Power - Max 250 W Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 50A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 5 nF @ 10 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Package / Case Module Supplier Device Package Module

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