CM450DX-24S
IGBT Modules for High Power Applications
Inventory:7,001
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : CM450DX-24S
-
Package/Case : Module
-
Brand : Mitsubishi Materials U.S.A. Corporation
-
Components Classification : IGBT Modules
-
Datesheet : CM450DX-24S DataSheet (PDF)
The CM450DX-24S is a high-power, high-efficiency IGBT module designed for use in high-performance industrial applications. This module features advanced IGBT technology and a compact design, making it suitable for power electronic systems that require reliable and efficient operation. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CM450DX-24S for a visual representation. Note: For detailed technical specifications, please refer to the CM450DX-24S datasheet. Functionality The CM450DX-24S is designed to provide high-power switching capabilities with high efficiency and reliability. It is a versatile solution for industrial applications requiring advanced power electronic components. Usage Guide Q: Is the CM450DX-24S suitable for high-temperature environments? For similar functionalities, consider these alternatives to the CM450DX-24S:Overview of CM450DX-24S
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the CM450DX-24S is designed to operate effectively in high-temperature environments with proper thermal management.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 1.8 V |
Continuous Collector Current at 25 C | 450 A | Gate-Emitter Leakage Current | 500 nA |
Pd - Power Dissipation | 3.405 kW | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Brand | Mitsubishi Electric |
Product Type | IGBT Modules | Factory Pack Quantity | 10 |
Subcategory | IGBTs |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BCM856BS,115](/img/package/sc70.jpg)
BCM856BS,115
Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![CM1000HC-66R](/img/package/module.jpg)
CM1000HC-66R
Insulated Gate Bipolar Transistor with 1000A current and 3300V voltage
![CM200HG-130H](/img/package/module.jpg)
CM200HG-130H
IGBT Modules for High Voltage Applications
![CM1500HC-66R](/img/package/module.jpg)
CM1500HC-66R
High Voltage Single IGBT Module
![FCMT125N65S3](/img/package/pqfn.jpg)
FCMT125N65S3
Trans MOSFET N-CH 650V 24A 4-Pin PQFN EP T/R
![MAC4DCMT4G](/img/package/dpak.jpg)
MAC4DCMT4G
Silicon Controlled Rectifier 4A 600V
![CM400HG-66H](/img/package/module.jpg)
CM400HG-66H
High-Power Insulated Gate Bipolar Transistor for Industrial Applications
![CM800HA-34H](/img/package/module.jpg)
CM800HA-34H
CM800HA-34H - High Voltage Single IGBT Module
![CM1800HC-34N](/img/package/module.jpg)
CM1800HC-34N
Single high voltage IGBT module
![CM900HB-90H](/img/package/module.jpg)
CM900HB-90H
CM900HB-90H High Voltage Single IGBT Module
![UF3SC120016K4S](/img/package/to247.jpg)
UF3SC120016K4S
1200V-16mΩ SiC FET TO-247-4L
![SPD03N60S5](/img/package/to252.jpg)
SPD03N60S5
N-Channel MOSFET Transistor, TO-252AA package
![SI2301BDS-T1-GE3](/img/package/sot23.jpg)
SI2301BDS-T1-GE3
P-Channel Transistor, 20V, 2.2A, TO-236 Package, Tape and Reel"
![IXXK200N65B4](/img/package/to264.jpg)
IXXK200N65B4
Trans IGBT Chip N-CH 650V 370A 1150W 3-Pin(3+Tab) TO-264
![CGHV96050F2](/img/product.png)
CGHV96050F2
Efficient device for wireless applications, such as Wi-Fi or Bluetoot
![IXTQ69N30P](/img/package/to-3.jpg)
IXTQ69N30P
Low on-resistance of 0.049 Rds
![IGW30N100T](/img/package/to247.jpg)
IGW30N100T
IGBT 1000V, 60A, TO-247-3
![BUK6D43-60EX](/img/package/dfn.jpg)
BUK6D43-60EX
Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 6-Pin DFN-MD EP T/R
![2SK3482-Z-E1-AZ](/img/package/to252.jpg)
2SK3482-Z-E1-AZ
Nch Single Power Mosfet 100V 36A 33Mohm Mp-3Z/To-252
![BC141-10](/img/package/to39.jpg)
BC141-10
Epitaxial Planar Transistors