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CM150E3U-12H

Type: IGBT Module

Inventory:8,657

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Overview of CM150E3U-12H

Mitsubishi Electric's CM150E3U-12H power transistor module is a reliable and efficient solution for high-power switching applications in energy, transportation, and manufacturing industries. Its insulated gate bipolar transistor (IGBT) technology enables high switching speeds and low on-state voltage drop, contributing to improved efficiency and reduced power losses. Additionally, the built-in overcurrent protection circuit ensures safe operation under fault conditions, making it a secure choice for demanding applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IGBTMOD™ Package Bulk
Product Status Obsolete Configuration Single
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 150 A
Power - Max 600 W Vce(on) (Max) @ Vge, Ic 3V @ 15V, 150A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 13.2 nF @ 10 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Package / Case Module Supplier Device Package Module

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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