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CM150DU-24F

Trans IGBT Module N-Channel 1.2KV 150A

Inventory:8,761

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Overview of CM150DU-24F

The CM150DU-24F is a dual IGBT power module designed for high power switching applications. It features two insulated gate bipolar transistors (IGBTs) with an integrated diode, offering a compact and efficient solution for power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCE: Collector-Emitter Voltage
  • VGE: Gate-Emitter Voltage
  • GND: Ground
  • IF+: Positive Terminal for Collector Current
  • IF-: Negative Terminal for Collector Current
  • IG+: Positive Terminal for Gate Current
  • IG-: Negative Terminal for Gate Current
  • VIN+: Positive Terminal for Integrated Diode
  • VIN-: Negative Terminal for Integrated Diode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CM150DU-24F for a visual representation.

Key Features

  • Dual IGBT Module: Integrates two IGBTs in a single module for high-power applications.
  • Integrated Diode: Includes an integrated diode for efficient freewheeling and reverse current protection.
  • Low Thermal Resistance: The module is designed for low thermal resistance and high heat dissipation, ensuring reliable operation under high power conditions.
  • Isolation: Provides electrical isolation between the control and power circuits for enhanced safety.
  • High Current and Voltage Rating: Capable of handling high current and voltage levels for demanding applications.

Note: For detailed technical specifications, please refer to the CM150DU-24F datasheet.

Application

  • Motor Drives: Ideal for use in motor drive and control systems requiring high-power switching.
  • Power Supplies: Suitable for power supply and inverter applications in industrial and commercial settings.
  • Renewable Energy: Used in renewable energy systems such as wind and solar power converters.

Functionality

The CM150DU-24F dual IGBT module provides efficient switching and power control capabilities for high-power applications, ensuring smooth and reliable operation in various power electronics systems.

Usage Guide

  • Power Connections: Connect the collector-emitter terminals (VCE) to the power source and load.
  • Gate Control: Apply the appropriate gate-emitter voltage (VGE) and gate current (IG) to control the IGBT switching.
  • Diode Functionality: Utilize the integrated diode for freewheeling and reverse current protection in the circuit.

Frequently Asked Questions

Q: Can the CM150DU-24F be used in high-frequency switching applications?
A: Yes, the CM150DU-24F is designed to handle high-frequency switching with appropriate heat dissipation considerations.

Equivalent

For similar functionalities, consider these alternatives to the CM150DU-24F:

  • CM100DY-24H: A similar dual IGBT module with slightly lower power handling capabilities.
  • FF200R12KT3: This is a dual IGBT module from Infineon Technologies with comparable power and voltage ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IGBTMOD™ Packaging Bulk
Part Status Discontinued IGBT Type Trench
Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 150 A Power - Max 600 W
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 150A Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 59 nF @ 10 V Input Standard
NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Package / Case Module
Supplier Device Package Module

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