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CM150DU-12H

IGBT Module for Transistor Applications, N-Type, 600 Volts, 150 Amperes

Inventory:7,697

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Overview of CM150DU-12H

The CM150DU-12H power module from Mitsubishi Electric is a powerhouse of innovation and reliability. With a voltage rating of 1200V and a current rating of 150A, this dual IGBT module is a perfect fit for high-power applications that require precision and efficiency. Its half-bridge configuration houses two IGBTs, working in tandem with freewheeling diodes to ensure smooth switching and protection against voltage spikes. Additionally, the module's advanced thermal management system, including a ceramic substrate and aluminum baseplate, guarantees optimal performance even in the most demanding of environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IGBTMOD™ Package Bulk
Product Status Obsolete Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 150 A
Power - Max 600 W Vce(on) (Max) @ Vge, Ic 3V @ 15V, 150A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 13.2 nF @ 10 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Package / Case Module Supplier Device Package Module

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