CM100DY-24H
Compact 7-Pin IGBT Module with low power dissipation
Inventory:6,702
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : CM100DY-24H
-
Package/Case : Module
-
Brand : Powerex Inc.
-
Components Classification : IGBT Modules
-
Datesheet : CM100DY-24H DataSheet (PDF)
The CM100DY-24H is a high-power, dual IGBT module designed for use in high-performance industrial applications. It combines two Insulated Gate Bipolar Transistors (IGBTs) and a diode in a single package, providing efficient and reliable power switching capabilities. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CM100DY-24H for a visual representation. Note: For detailed technical specifications, please refer to the CM100DY-24H datasheet. Functionality The CM100DY-24H offers reliable and efficient power switching capabilities, making it suitable for high-power industrial applications that demand robust performance and control. Usage Guide Q: Can the CM100DY-24H be used in high-frequency applications? For similar functionalities, consider these alternatives to the CM100DY-24H:Overview of CM100DY-24H
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the CM100DY-24H is suitable for high-frequency switching applications due to its design characteristics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | IGBTMOD™ | Package | Bulk |
Product Status | Obsolete | Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 100 A |
Power - Max | 780 W | Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 100A |
Current - Collector Cutoff (Max) | 1 mA | Input Capacitance (Cies) @ Vce | 20 nF @ 10 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Package / Case | Module | Supplier Device Package | Module |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BCM856BS,115](/img/package/sc70.jpg)
BCM856BS,115
Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![CM1000HC-66R](/img/package/module.jpg)
CM1000HC-66R
Insulated Gate Bipolar Transistor with 1000A current and 3300V voltage
![CM200HG-130H](/img/package/module.jpg)
CM200HG-130H
IGBT Modules for High Voltage Applications
![CM1500HC-66R](/img/package/module.jpg)
CM1500HC-66R
High Voltage Single IGBT Module
![FCMT125N65S3](/img/package/pqfn.jpg)
FCMT125N65S3
Trans MOSFET N-CH 650V 24A 4-Pin PQFN EP T/R
![MAC4DCMT4G](/img/package/dpak.jpg)
MAC4DCMT4G
Silicon Controlled Rectifier 4A 600V
![CM400HG-66H](/img/package/module.jpg)
CM400HG-66H
High-Power Insulated Gate Bipolar Transistor for Industrial Applications
![CM800HA-34H](/img/package/module.jpg)
CM800HA-34H
CM800HA-34H - High Voltage Single IGBT Module
![CM1800HC-34N](/img/package/module.jpg)
CM1800HC-34N
Single high voltage IGBT module
![CM900HB-90H](/img/package/module.jpg)
CM900HB-90H
CM900HB-90H High Voltage Single IGBT Module
![UM6K34NTCN](/img/package/sot236.jpg)
UM6K34NTCN
0V-driven N-type MOSFET
![APT60M60JFLL](/img/package/sot.jpg)
APT60M60JFLL
Discrete Semiconductor Module APT60M60JFLL featuring FREDFET MOS7
![SQ2360EES-T1-GE3](/img/package/sot23.jpg)
SQ2360EES-T1-GE3
SQ2360EES-T1-GE3 from Vishay: An N-channel MOSFET transistor rated for currents up to 4
![IXZ318N50](/img/package/smd.jpg)
IXZ318N50
Silicon N-Channel Metal-oxide Semiconductor FET
![2SD2537T100V](/img/package/sot89.jpg)
2SD2537T100V
1.2A NPN Bipolar Transistors operating within a voltage range of 25V
![BTA06-600CRG](/img/package/to220.jpg)
BTA06-600CRG
TRIAC 600V 6A(RMS) 63A 3-Pin(3+Tab) TO-220AB Tube
![CGHV31500F1](/img/product.png)
CGHV31500F1
Power transistor for RF applications
![IXFX230N20T](/img/package/to247.jpg)
IXFX230N20T
230A 200V MOSFET
![2SC4301](/img/package/to3.jpg)
2SC4301
Single Element, High Power Transistor
![MMBTH10-4LT1G](/img/package/sot23.jpg)
MMBTH10-4LT1G
Trans GP BJT NPN SOT-23 25V 3-Pin T/R