• packageimg
packageimg

BSZ063N04LS6ATMA1

Designed for efficient power management, this N-channel MOSFET is capable of handling voltages up to 40V and currents up to 15A

Inventory:6,001

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for BSZ063N04LS6ATMA1 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of BSZ063N04LS6ATMA1

The BSZ063N04LS6ATMA1 power MOSFET from Infineon Technologies is a top-of-the-line solution for high power applications. With a 40V drain-source voltage rating and a hefty 63A continuous drain current, this MOSFET can handle heavy loads with ease. Its low on-resistance of 4mΩ ensures efficient power transfer and minimal power loss, making it an excellent choice for energy-conscious designs. The high pulsed drain current capability of 252A further solidifies its position as a reliable component for demanding scenarios

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TSDSON-FL-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 7 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V Qg - Gate Charge 9.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 38 W Channel Mode Enhancement
Tradename OptiMOS Series BSZ0xx
Brand Infineon Technologies Configuration Single
Fall Time 2 ns Forward Transconductance - Min 64 S
Product Type MOSFET Rise Time 1 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 3 ns Part # Aliases BSZ063N04LS6 SP001687058
Unit Weight 0.001367 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRFS38N20DTRLP

IRFS38N20DTRLP

N-channel MOSFET capable of conducting 43A with a maximum power dissipation of 300W
BTA26-800CWRG

BTA26-800CWRG

The BTA26-800CWRG is designed with a 25A current rating, 800V voltage capability, and comes in a TOP3 package
SIR826ADP-T1-GE3

SIR826ADP-T1-GE3

Designed for high-power electronic devices and equipment
SKB10N60A

SKB10N60A

IGBT Transistor with 600V Voltage Capability and 10A Current Handling
SI7960DP-T1-GE3

SI7960DP-T1-GE3

MOSFET substitution for SI7960DP-T1-GE3
SPB70N10L

SPB70N10L

N-channel 100V 70A power MOSFET in D2PAK package
FQA19N20

FQA19N20

200V 23A N-channel MOSFET TO-3P Mounting
IRLML6401TR

IRLML6401TR

Tape and Reel format for convenience, featuring a Silicon P-channel MOSFET with specifications of 12V and 4.3A
BSR316PH6327XTSA1

BSR316PH6327XTSA1

MOSFET P-Channel 100V 0.36A 1.8 Ohm SIPMOS SC-59 Package
MMBT3906,215

MMBT3906,215

PNP switching transistor in a compact SOT23 (SC-70) Surface-Mounted Device (SMD) plastic package