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BSS670S2LH6327XT

Infineon BSS670S2LH6327XT N-channel MOSFET Transistor, 0.54 A, 55 V, 3-Pin SOT-23

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Overview of BSS670S2LH6327XT

The BSS670S2LH6327XT is a P-channel enhancement mode field-effect transistor (FET) designed for use in low voltage applications. This transistor is ideal for use in power management and battery protection circuits.

Pinout

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the BSS670S2LH6327XT for a more visual representation.

Key Features

  • Low Threshold Voltage: The BSS670S2LH6327XT has a low threshold voltage, making it suitable for low voltage applications.
  • Enhancement Mode: This transistor operates in the enhancement mode, allowing for easy control of the current flow.
  • Low On-Resistance: The low on-resistance of the BSS670S2LH6327XT results in minimal power dissipation and high efficiency.
  • Small Package: The transistor is available in a small SOT23 package, enabling compact circuit designs.

Note: For detailed technical specifications, please refer to the BSS670S2LH6327XT datasheet.

Application

  • Power Management: The BSS670S2LH6327XT is commonly used in power management circuits for switching and regulation purposes.
  • Battery Protection: This transistor is suitable for battery protection applications in portable electronic devices.
  • Load Switching: It can be utilized as a load switch in various low voltage applications.

Functionality

The BSS670S2LH6327XT acts as a switch, controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the gate terminal to control the flow of current between the drain and source terminals.
  • Connection: Connect the drain and source terminals to the respective components in the circuit based on the application requirement.

Frequently Asked Questions

Q: What is the maximum voltage rating for the BSS670S2LH6327XT?
A: The maximum voltage rating for the BSS670S2LH6327XT is typically provided in the datasheet and should be observed to prevent damage to the transistor.

Q: Can this transistor be used in automotive applications?
A: The suitability of the BSS670S2LH6327XT for automotive applications should be verified based on its operating temperature range and other relevant specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 540 mA Rds On - Drain-Source Resistance 346 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 1.7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 360 mW
Channel Mode Enhancement Qualification AEC-Q101
Series BSS670S2 Brand Infineon Technologies
Configuration Single Fall Time 24 ns
Forward Transconductance - Min 600 mS Height 1.1 mm
Length 2.9 mm Product Type MOSFET
Rise Time 25 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 9 ns
Width 1.3 mm Part # Aliases SP000928950 BSS670S2LH6327XTSA1
Unit Weight 0.000282 oz

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