BSM300GA120DN2
IGBT Module for IGBT Transistor N-CH 1200V 430A 2500mW
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $427.190 | $427.19 |
200 | $165.316 | $33,063.20 |
500 | $159.507 | $79,753.50 |
1000 | $156.636 | $156,636.00 |
Inventory:8,731
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Part Number : BSM300GA120DN2
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Package/Case : 62 mm
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Brand : Infineon
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Components Classification : IGBT Modules
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Datesheet : BSM300GA120DN2 DataSheet (PDF)
The BSM300GA120DN2 is a 1200V, 300A IGBT power module designed for high power switching applications in industrial and automotive sectors. It features low saturation voltage and high ruggedness, making it suitable for various power electronic systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM300GA120DN2 for a visual representation. Note: For detailed technical specifications, please refer to the BSM300GA120DN2 datasheet. Functionality The BSM300GA120DN2 is a robust IGBT power module designed for high-power switching applications, providing efficient and reliable power control in industrial and automotive systems. Usage Guide Q: Can the BSM300GA120DN2 withstand high temperature environments? Q: What is the maximum collector current supported by the BSM300GA120DN2? For similar functionalities, consider these alternatives to the BSM300GA120DN2:Overview of BSM300GA120DN2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSM300GA120DN2 includes temperature sensing and is designed to operate reliably in high temperature conditions.
A: The BSM300GA120DN2 is capable of handling a maximum collector current of 300A.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 430 A | Gate-Emitter Leakage Current | 320 nA |
Pd - Power Dissipation | 2.5 kW | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 36.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100730 BSM300GA120DN2HOSA1 | Unit Weight | 1 lb |
Warranty & Returns
Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
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