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IXFB60N80P

MOSFET capable of handling 60 Amps at 800V, offering a low on-resistance of 0.14

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Overview of IXFB60N80P

The IXFB60N80P is a power MOSFET transistor designed for high-power switching applications. It features a breakdown voltage of 800V and a continuous drain current of 60A, making it ideal for use in power supplies, motor control, and other high-current circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFB60N80P MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The IXFB60N80P has a high breakdown voltage of 800V, suitable for high-power applications.
  • High Current Capability: With a continuous drain current of 60A, this MOSFET can handle substantial current loads.
  • Fast Switching Speed: Offers fast switching times for efficient power control in switching applications.
  • Low On-Resistance: The MOSFET has low on-state resistance, reducing power losses and improving efficiency.
  • Robust Construction: Built to withstand high voltages and currents, ensuring reliability in demanding environments.

Note: For detailed technical specifications, please refer to the IXFB60N80P datasheet.

Application

  • Switched-Mode Power Supplies: Suitable for use in high-power switching power supply designs.
  • Motor Control: Ideal for motor drive circuits requiring high current handling capabilities.
  • Inverter Systems: Used in inverter applications for converting DC power to AC power efficiently.

Functionality

The IXFB60N80P is a power MOSFET transistor designed for high-current switching applications, providing efficient power control and reliable performance in various electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal to control the switching behavior of the MOSFET.
  • Drain-Source Connection: Connect the load between the drain and source terminals for current flow control.
  • Heatsink Consideration: Due to high power handling, consider proper heatsinking to dissipate heat generated during operation.

Frequently Asked Questions

Q: What is the maximum voltage the IXFB60N80P can handle?
A: The IXFB60N80P has a breakdown voltage rating of 800V, allowing it to withstand high voltages in applications.

Q: Is heatsinking required for the IXFB60N80P?
A: Due to its high current and power capabilities, proper heatsinking is recommended to maintain safe operating temperatures.

Equivalent

For similar functionalities, consider these alternatives to the IXFB60N80P:

  • IRF840: A power MOSFET with comparable voltage and current ratings, suitable for high-power applications.
  • FDP8870: This MOSFET offers similar power handling capabilities and fast switching speeds for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 800 Maximum On-Resistance @ 25 ℃ (Ohm) 0.14
Continuous Drain Current @ 25 ℃ (A) 60 Gate Charge (nC) 250
Input Capacitance, CISS (pF) 18000 Thermal resistance [junction-case] (K/W) 0.1
Configuration Single Package Type TO-264 PLUS
Power Dissipation (W) 1250 Maximum Reverse Recovery (ns) 250
Sample Request Yes Check Stock Yes

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