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IRF740SPBF

VISHAY - IRF740SPBF. - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-263 (D2PAK), Surface Mount

Quantity Unit Price(USD) Ext. Price
1 $1.740 $1.74
10 $1.504 $15.04
50 $1.357 $67.85
100 $1.207 $120.70
500 $1.049 $524.50
1000 $1.019 $1,019.00

Inventory:5,266

*The price is for reference only.
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Overview of IRF740SPBF

The IRF740SPBF is a N-Channel Power MOSFET designed for high-power switching applications. This MOSFET features a low on-state resistance and high current capability, making it suitable for various power management and conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF740SPBF MOSFET for a visual representation.

Key Features

  • High Power Capability: The IRF740SPBF can handle high continuous current and voltage levels, suitable for power switching applications.
  • Low On-State Resistance: With its low RDS(on), this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed: The IRF740SPBF offers fast switching characteristics, enabling efficient power control in circuits.
  • High Temperature Performance: This MOSFET operates reliably at elevated temperatures, making it suitable for demanding environments.

Note: For detailed technical specifications, please refer to the IRF740SPBF datasheet.

Application

  • Power Management: Ideal for power switching applications such as motor control, power supplies, and DC-DC converters.
  • Inverters: Used in inverter circuits for converting DC power to AC power in applications like solar inverters and UPS systems.
  • Electronic Load Control: Suitable for controlling electronic loads and managing power distribution in industrial systems.

Functionality

The IRF740SPBF N-Channel MOSFET serves as a robust and efficient power switch, allowing for seamless control and regulation of high-power circuits.

Usage Guide

  • Gate Control: Apply the appropriate voltage signal to the Gate (G) pin to control the MOSFET's conductivity.
  • Load Connection: Connect the Load to the Drain (D) pin to regulate current flow through the MOSFET.
  • Source Connection: Ground the Source (S) pin for proper circuit operation.

Frequently Asked Questions

Q: Is the IRF740SPBF suitable for high-frequency switching applications?
A: Yes, the IRF740SPBF exhibits fast switching speed and is suitable for high-frequency switching in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IRF740SPBF:

  • IRF840SPBF: A higher power N-Channel MOSFET with similar characteristics to the IRF740SPBF.
  • IRF640SPBF: This MOSFET offers a lower current rating than the IRF740SPBF but provides comparable performance for medium-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 400 V Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 550 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 63 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Unit Weight 0.139332 oz

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