BSM200GA120DN2
300A Single Switch IGBT Module rated for 1200V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $339.524 | $339.52 |
200 | $131.392 | $26,278.40 |
500 | $126.774 | $63,387.00 |
1000 | $124.493 | $124,493.00 |
Inventory:9,621
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Part Number : BSM200GA120DN2
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Package/Case : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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Datesheet : BSM200GA120DN2 DataSheet (PDF)
The BSM200GA120DN2 is a dual IGBT power module designed for high power switching applications in industrial and automotive systems. It features a high current rating and low saturation voltage, making it suitable for efficient power conversion and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM200GA120DN2 for a visual representation. Note: For detailed technical specifications, please refer to the BSM200GA120DN2 datasheet. Functionality The BSM200GA120DN2 is designed to efficiently switch high currents in industrial and automotive applications, providing reliable power control and conversion. Usage Guide Q: Is the BSM200GA120DN2 suitable for automotive traction applications? For similar functionalities, consider these alternatives to the BSM200GA120DN2:Overview of BSM200GA120DN2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSM200GA120DN2 is designed for use in automotive traction inverters and motor drive systems, providing efficient power switching for electric and hybrid vehicles.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 300 A | Gate-Emitter Leakage Current | 200 nA |
Pd - Power Dissipation | 1.55 kW | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 36.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100725 BSM200GA120DN2HOSA1 | Unit Weight | 1 lb |
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