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BSC050NE2LSATMA1

Single N-Channel power MOSFET with 25V voltage rating

Inventory:6,657

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Overview of BSC050NE2LSATMA1

Infineon Technologies' BSC050NE2LSATMA1 MOSFET stands out for its exceptional efficiency and power-handling capabilities. With a low RDS(on) of 2.5mΩ and a hefty current rating of 50A, this component minimizes conduction losses and maximizes overall system efficiency. Its thermal resistance of 0.45°C/W ensures efficient heat dissipation, crucial for maintaining optimal operating temperatures in rigorous applications. Packaged in a TO-263-7 housing, the BSC050NE2LSATMA1 offers not only superior thermal properties but also easy integration into various designs. Whether in industrial, automotive, or consumer electronics applications, this MOSFET from the OptiMOS 5 series delivers reliable performance and durability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 25 V Id - Continuous Drain Current 58 A
Rds On - Drain-Source Resistance 4.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 14 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 28 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Fall Time 2 ns
Forward Transconductance - Min 38 S Height 1.27 mm
Length 5.9 mm Product Type MOSFET
Rise Time 2.2 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 11.4 ns Typical Turn-On Delay Time 2.5 ns
Width 5.15 mm Part # Aliases BSC050NE2LS SP000756340
Unit Weight 0.010582 oz

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