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BSC040N10NS5ATMA1

8-pin TDSON EP-packaged MOSFET tailored for automotive environments, engineered for efficient power management

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Overview of BSC040N10NS5ATMA1

The BSC040N10NS5ATMA1 is a high-performance, N-channel power MOSFET transistor designed for use in various power switching applications. It features a low on-resistance, fast switching speed, and robust packaging, making it a suitable choice for efficient power conversion and control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Drain (D)
  • Source (S)
  • Gate (G)

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the BSC040N10NS5ATMA1 transistor for a more visual representation.

Key Features

  • N-Channel Power MOSFET: Designed for high-power switching and control applications.
  • Low On-Resistance (RDS(on)): Offers a low resistance between the drain and source, reducing conduction losses and improving efficiency.
  • Fast Switching Speed: Enables high-frequency switching, suitable for efficient power conversion and control circuits.
  • Robust Packaging: Housed in a sturdy, thermally-efficient DPAK package for reliable operation in demanding environments.
  • Wide Operating Voltage Range: Supports a wide range of input voltages, making it versatile for various power supply designs.

Note: For detailed technical specifications, please refer to the BSC040N10NS5ATMA1 datasheet.

Application

  • Power Supplies: Suitable for use in high-efficiency power supply designs, including switching mode power supplies (SMPS).
  • Motor Control: Applicable in motor control applications, such as variable frequency drives (VFDs) and servo drives.
  • Power Conversion: Utilized in various power conversion circuits, including DC-DC converters and inverters.

Functionality

The BSC040N10NS5ATMA1 is a high-performance N-channel power MOSFET that can be used as a switching element in power conversion and control applications. Its low on-resistance and fast switching speed contribute to improved system efficiency and performance.

Usage Guide

  • Power Supply: Connect the drain (D) to the positive power supply, the source (S) to the load, and the gate (G) to the control signal.
  • Cooling: Ensure adequate cooling, as the DPAK package requires proper heat dissipation for reliable operation.
  • Gate Drive: Provide a suitable gate driver circuit to effectively control the MOSFET's switching behavior.

Equivalent

For similar functionalities, consider these alternatives to the BSC040N10NS5ATMA1:

  • BSC050N10NS5ATMA1: This is a higher-rated version of the BSC040N10NS5ATMA1, offering higher current handling capabilities.
  • IRFB4410PbF: This is an N-channel power MOSFET from Infineon Technologies, providing comparable performance and features.
  • PSMN1R0-30YLC: This is a power MOSFET from NXP Semiconductors, sharing similar characteristics and suitability for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo RoHS compliant, non dry
packageNameMarketing SuperSO8 msl 1
halogenFree yes customerInfo STANDARD
fgr V50 productClassification ASP
productStatusInfo active and preferred hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP001295030
fourBlockPackageName PG-TDSON-8-7 rohsCompliant yes
opn BSC040N10NS5ATMA1 completelyPbFree no
sapMatnrSali SP001295030

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