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BSC016N06NSTATMA1

High voltage N-channel MOSFET with 31A current rating

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Overview of BSC016N06NSTATMA1

Tailored for high power applications, the BSC016N06NSTATMA1 is a N-channel power MOSFET transistor with a 60V drain-source voltage (VDS) and a 160A continuous drain current (ID), making it well-suited for a wide range of power conversion and control applications. Its low on-resistance (RDS(on)) of 1.6mΩ minimizes power losses and enhances efficiency in high-current circuits, while the low gate charge (Qg) of 250nC enables fast switching speeds and reduces switching losses in the circuit. Housed in a TO-220 package with a through-hole mounting style, it is easy to integrate into existing circuit designs, and its wide operating temperature range from -55°C to 175°C ensures dependable performance in harsh environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V Qg - Gate Charge 71 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 139 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 9 ns Forward Transconductance - Min 70 S
Product Type MOSFET Rise Time 9 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 35 ns
Typical Turn-On Delay Time 19 ns Part # Aliases BSC016N06NST SP001657074
Unit Weight 0.003683 oz

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