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BSC014N04LSIATMA1

BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":

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Overview of BSC014N04LSIATMA1

Product BSC014N04LSIATMA1 is part of a new 40V and 60V product family that offers the industry's lowest R DS(on) as well as exceptional switching performance for fast switching applications. With advanced thin wafer technology, this product achieves a 15% lower R DS(on) and a 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 77 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 96 W Channel Mode Enhancement
Tradename OptiMOS Series OptiMOS 5
Brand Infineon Technologies Configuration Single
Fall Time 11 ns Forward Transconductance - Min 110 S
Height 1.27 mm Length 5.9 mm
Product Type MOSFET Rise Time 50 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 55 ns
Typical Turn-On Delay Time 16 ns Width 5.15 mm
Part # Aliases BSC014N04LSI SP000953212 Unit Weight 0.004180 oz

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