BSC010N04LSATMA1
High-performance MOSFET featuring an N-type channel
Inventory:5,230
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BSC010N04LSATMA1
-
Package/Case : TDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : BSC010N04LSATMA1 DataSheet (PDF)
-
Series : BSC010N04LS
Overview of BSC010N04LSATMA1
The BSC010N04LSATMA1 power MOSFET transistor from Infineon Technologies is a versatile component that excels in high-power electronic applications. With a VDS voltage rating of 40V and a continuous drain current rating of 100A, this transistor is well-suited for demanding tasks such as motor control, inverters, and DC-DC converters. Its low on-state resistance of 1.2 mΩ ensures minimal power losses and improved efficiency, making it an excellent choice for applications where power consumption is a critical concern
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TDSON-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 133 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 139 W | Channel Mode | Enhancement |
Tradename | OptiMOS | Series | OptiMOS 5 |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 9 ns | Forward Transconductance - Min | 140 S |
Height | 1.27 mm | Length | 5.9 mm |
Product Type | MOSFET | Rise Time | 12 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 46 ns |
Typical Turn-On Delay Time | 10 ns | Width | 5.15 mm |
Part # Aliases | BSC010N04LS SP000928282 | Unit Weight | 0.003527 oz |
Product Status | Active | FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 1mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 20 V |
Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8 FL |
Base Product Number | BSC010 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
BSC026N08NS5ATMA1
Part number BSC026N08NS5ATMA1
BSC110N15NS5ATMA1
TDSON-8 MOSFET, N-type, 150V, 76A, with low on-resistance
BSS138NH6327
Reel Packed for Automated Assembly
BSC040N10NS5
High-Frequency Operation and Low Vibration Tolerance Enable
BSC010NE2LS
High power 8-pin TDSON EP package MOSFET
BSZ0902NSIATMA1
ROHS-compliant 30V N-Channel MOSFET with low on-resistance
BSC007N04LS6ATMA1
INFINEON - BSC007N04LS6ATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 620 µohm, TDSON, Surface Mount
BSC009NE2LS5IATMA1
8-pin TDSON EP package type for easy installation
BSC014N04LSATMA1
MOSFET N-channel 40V 100A TDSON-8 FL OptiMOS
BSC014N06NSTATMA1
BSC014N06NSTATMA1 is a 60V, 257A, 1.45mohm OptiMOS Power-Transistor with N-Channel characteristics and TDSON-8 FL packaging
BSM200GA120DN2C
IGBT 1200V 200A Modules
IRF7309TRPBF
ROHS-certified SO-8 MOSFETs IRF7309TRPBF
CM100TJ-24F
1200V Breakdown Voltage
TN6725A
TO-226 3L NPN Darlington Transistor 7500 Bulk
APT10M07JVR
Microchip Technology's APT10M07JVR
IRGBC30F
IRGBC30F is a Trans IGBT Chip with a voltage rating of 600V and a maximum current rating of 31A
SI4980DY
N-Type MOSFET with Voltage Rating of 80V and Current Rating of 3.7A in 8-Pin SOIC Package
QIS4506001
4500V N-channel IGBT Transistor with 60A Current Rating and 4-pin Configuration
FQPF9N90CT
TO220FP Package
BSS83,215
NXP presents BSS83