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MTB2P50ET4G

Single P-Channel D2PAK MOSFET with a resistance of 6 Ohm

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Overview of MTB2P50ET4G

The MTB2P50ET4G is an N-channel Power MOSFET designed for high-performance switching applications. It features a low on-resistance and high current-handling capability, making it ideal for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MTB2P50ET4G MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The MTB2P50ET4G features a low RDS(on) value, minimizing power loss and improving efficiency in power electronics applications.
  • High Current Handling: With its high current-handling capability, this MOSFET is suitable for driving heavy loads and power switching applications.
  • Fast Switching Speed: The MTB2P50ET4G offers fast switching characteristics, enabling rapid control of power circuits.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation to ensure reliable operation under high power conditions.

Note: For detailed technical specifications, please refer to the MTB2P50ET4G datasheet.

Application

  • Power Management: Ideal for use in power supplies, voltage regulators, and DC-DC converters.
  • Motor Control: Suitable for driving DC motors, stepper motors, and other motor control applications.
  • Switching Power Circuits: Used in various power switching applications such as inverter circuits and motor drives.

Functionality

The MTB2P50ET4G N-channel MOSFET is designed for efficient power switching and control in a wide range of electronic applications, providing high performance and reliability.

Usage Guide

  • Gate Control: Apply an appropriate voltage to the gate pin (G) to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load between the drain (D) and source (S) pins to utilize the switching capability of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking and thermal management for reliable operation, especially in high-power applications.

Frequently Asked Questions

Q: Is the MTB2P50ET4G suitable for use in automotive applications?
A: Yes, the MTB2P50ET4G is designed for high-performance applications including automotive power systems and motor control in vehicles.

Equivalent

For similar functionalities, consider these alternatives to the MTB2P50ET4G:

  • IRF3205: This is a comparable N-channel MOSFET with similar specifications and performance characteristics suitable for power switching applications.
  • FQP30N06L: An N-channel MOSFET offering comparable voltage and current ratings for power management and motor control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Obsolete Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418B-04
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 800
ON Target N Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) 500
VGS Max (V) 20 VGS(th) Max (V) 4
ID Max (A) 2 PD Max (W) 2.5
RDS(on) Max @ VGS = 10 V (mΩ) 6000 Qg Typ @ VGS = 10 V (nC) 19
Ciss Typ (pF) 845 Pricing ($/Unit) Price N/A

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