BCP5616QTA
4-Pin Power Bipolar Transistor with 80V Collector-Emitter Voltage Rating
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.118 | $0.59 |
50 | $0.098 | $4.90 |
150 | $0.088 | $13.20 |
1000 | $0.080 | $80.00 |
2000 | $0.074 | $148.00 |
5000 | $0.071 | $355.00 |
Inventory:7,702
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Part Number : BCP5616QTA
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Package/Case : SOT223-3
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Brand : DIODES
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Components Classification : Single Bipolar Transistors
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Datesheet : BCP5616QTA DataSheet (PDF)
The BCP5616QTA is an NPN Silicon AF Transistor with a high current gain and low saturation voltage, ideal for audio frequency amplifier and general switching applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BCP5616QTA transistor for a visual representation. Note: For detailed technical specifications, please refer to the BCP5616QTA datasheet. Functionality The BCP5616QTA NPN transistor is designed to amplify and switch electrical signals in audio and general-purpose applications, providing reliable performance in various electronic circuits. Usage Guide For similar functionalities, consider these alternatives to the BCP5616QTA:Overview of BCP5616QTA
Pinout
Circuit Diagram
Key Features
Application
Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-223-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 500 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 2 W |
Gain Bandwidth Product fT | 150 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Qualification | AEC-Q101 |
Brand | Diodes Incorporated | Continuous Collector Current | 1 A |
DC Collector/Base Gain hfe Min | 100 | DC Current Gain hFE Max | 250 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1000 |
Subcategory | Transistors | Technology | Si |
Unit Weight | 0.003951 oz |
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