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SI4825DY

Power MOSFET with 30V Voltage Rating, 11.5A Current Capacity, and 3W Power Handling

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Overview of SI4825DY

The SI4825DY is a p-channel 30-V MOSFET used in various electronic applications, providing a versatile solution for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Source (S): This pin is connected to the source terminal of the MOSFET.
  • Gate (G): The gate pin is used to control the switching of the MOSFET.
  • Drain (D): The drain pin is connected to the drain terminal of the MOSFET.
  • Substrate (S): Substrate connection for improved noise immunity.

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the SI4825DY for a more visual representation.

Key Features

  • Low ON-Resistance: The SI4825DY offers low ON-resistance, minimizing power loss and improving efficiency in power management applications.
  • Fast Switching Speed: This MOSFET provides fast switching characteristics, making it suitable for high-frequency applications.
  • Low Gate Charge: With its low gate charge, the SI4825DY facilitates efficient switching and reduced gate drive requirements.
  • Enhanced Power Density: The compact package and high power handling capability contribute to enhanced power density in circuit designs.

Note: For detailed technical specifications, please refer to the SI4825DY datasheet.

Application

  • Power Management: The SI4825DY is commonly used in power management circuits for applications such as voltage regulation and load switching.
  • Switching Circuits: This MOSFET can be utilized in various switching circuits, including motor control, LED lighting, and DC-DC converters.
  • Audio Amplifiers: The SI4825DY may also be employed in audio amplifier output stages and other audio-related applications.

Functionality

The SI4825DY serves as a reliable and efficient p-channel MOSFET for power management and switching applications, providing low ON-resistance and high switching speed.

Usage Guide

  • Connection: Connect the source pin to the ground or negative terminal, the gate pin to the control circuitry, and the drain pin to the load or power supply.
  • Drive Voltage: Apply the appropriate gate-source voltage to achieve the desired ON/OFF state.
  • Heat Dissipation: Proper heat sinking may be required depending on the power dissipation and operating conditions.

Equivalent

For similar functionalities, consider these alternatives to the SI4825DY:

  • SI2305: A similar p-channel MOSFET with low ON-resistance and high switching speed.
  • IRF4905: This MOSFET offers comparable performance and is suitable for power management and switching applications.
  • BSS84: A complementary p-channel MOSFET alternative that may suit certain circuit requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Tradename TrenchFET
Series SI4 Brand Vishay / Siliconix
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Factory Pack Quantity 100
Subcategory MOSFETs Width 3.9 mm
Unit Weight 0.006596 oz

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