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AONS66917

AONS66917 Power Field-Effect Transistor details

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Overview of AONS66917

The AONS66917 is a high-voltage N-channel MOSFET designed for power management applications.This MOSFET features a low on-resistance and high drain current capability,making it suitable for switching and amplification tasks in various electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate Terminal
  • D:Drain Terminal
  • S:Source Terminal
  • VCC:Positive Power Supply
  • GND:Power Ground
  • NC:No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AONS66917 MOSFET for a visual representation.

Key Features

  • High Voltage Rating:The AONS66917 can handle high voltages,making it suitable for power management applications.
  • Low On-Resistance:This MOSFET offers low on-resistance,leading to minimal power loss and efficient operation.
  • High Drain Current Capability:With its high drain current capability,this MOSFET can handle large currents in circuit applications.
  • Fast Switching Speed:The AONS66917 provides fast switching speeds,allowing for quick response times in switching applications.
  • Robust Construction:Built with quality materials,the AONS66917 ensures reliable performance and durability.

Note:For detailed technical specifications,please refer to the AONS66917 datasheet.

Application

  • Power Management Systems:Ideal for use in power management systems for voltage regulation and current control.
  • Switching Circuits:Suitable for switching circuits where fast switching speeds and high reliability are required.
  • Amplification:Can be used for amplification tasks in audio or signal processing applications.

Functionality

The AONS66917 N-channel MOSFET serves as an efficient switch for controlling high voltages and currents in electronic circuits.It offers optimal performance and reliability in power management and amplification applications.

Usage Guide

  • Gate Connection:Connect the Gate terminal to the control signal for switching the MOSFET.
  • Power Supply:Apply the power supply voltage (VCC) to the Drain terminal for the desired operation.
  • Load Connection:Connect the Load between the Drain and Source terminals to control the current flow.

Frequently Asked Questions

Q:Can the AONS66917 be used in high-frequency applications?
A:Yes,the AONS66917 offers fast switching speeds suitable for high-frequency applications.

Equivalent

For similar functionality, consider these alternatives to the AONS66917:

  • IRF520N: This N-channel MOSFET offers comparable characteristics to the AONS66917 for power management applications.
  • FQP27P06: An alternative MOSFET with similar voltage and current capabilities for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Active
HTS 8541.29.00.95 Category Power MOSFET
Configuration Single Quad Drain Triple Source Process Technology AlphaSGT
Channel Mode Enhancement Channel Type N
Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V) 2.8
Maximum Continuous Drain Current (A) 100 Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1 Maximum Drain Source Resistance (MOhm) 3.5@10V
Typical Gate Charge @ Vgs (nC) 80@10V|[email protected] Typical Gate Charge @ 10V (nC) 80
Typical Input Capacitance @ Vds (pF) 5940@50V Maximum Power Dissipation (mW) 215000
Typical Fall Time (ns) 12 Typical Rise Time (ns) 6.5
Typical Turn-Off Delay Time (ns) 46 Typical Turn-On Delay Time (ns) 16.5
Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 150
Packaging Tape and Reel Mounting Surface Mount
Package Height 0.95(Max) Package Width 5.55
Package Length 5.2 PCB changed 8
Standard Package Name DFN Supplier Package DFN EP
Pin Count 8

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