2SC4097T106R
Transistor General Purpose Bipolar Junction NPN 32 Volts 0.5 Amps 3-Pin Ultra Miniature Transistor Tape and Reel
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.057 | $0.28 |
50 | $0.051 | $2.55 |
150 | $0.048 | $7.20 |
500 | $0.045 | $22.50 |
3000 | $0.037 | $111.00 |
6000 | $0.036 | $216.00 |
Inventory:6,546
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : 2SC4097T106R
-
Package/Case : UMT3
-
Brand : Rohm Semiconductor
-
Components Classification : Single Bipolar Transistors
-
Datesheet : 2SC4097T106R DataSheet (PDF)
-
Series : 2SC4097
Overview of 2SC4097T106R
The 2SC4097T106R is a high-speed switching bipolar junction transistor (BJT) that is part of Toshiba's 2SC series. As an NPN transistor, it operates with electrons as the majority charge carriers. With a maximum collector-base voltage (VCBO) of 50V, maximum collector-emitter voltage (VCEO) of 30V, and maximum emitter-base voltage (VEBO) of 5V, it is designed to handle various voltage applications while ensuring proper functionality
Key Features
- 1) High ICMax.
- ICMax. = 0.5A
- 2) Low VCE(sat).
- Optimal for low voltage operation.
- 3) Complements the 2SA1577.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | ROHM CO LTD |
Part Package Code | SC-70 | Package Description | SC-70, 3 PIN |
Pin Count | 3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 53 Weeks, 1 Day |
Samacsys Manufacturer | ROHM Semiconductor | Collector Current-Max (IC) | 0.5 A |
Collector-Emitter Voltage-Max | 32 V | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 180 | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | NPN |
Power Dissipation-Max (Abs) | 0.2 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN SILVER COPPER |
Terminal Form | GULL WING | Terminal Position | DUAL |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 250 MHz | VCEsat-Max | 0.4 V |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![2SC2412KT146R](/files/uploads/product/s/90309e5385b64fa2be1b41c10b188ee7.webp)
2SC2412KT146R
Bipolar Transistors - BJT
![2SK2094TL](/img/package/dpak2.jpg)
2SK2094TL
MOSFET Power Transistor for Surface Mount Applications
![2SD2704KT146](/img/package/sot23.jpg)
2SD2704KT146
Small Signal NPN Si Transistor 20 V 300 mA
![2SD2114KT146V](/img/package/sc70.jpg)
2SD2114KT146V
NPN Bipolar Transistor, 20V, 0.5A, 200mW, SC59 Package
![2SCR523MT2L](/img/package/sot23.jpg)
2SCR523MT2L
Trans GP BJT NPN 50V 0.1A 3-Pin SOT-723 T/R
![2SC5876T106Q](/img/package/sot23.jpg)
2SC5876T106Q
Product 2SC5876T106Q is an NPN bipolar transistor with a voltage rating of 60V and a power dissipation of 200mW at 120°C when operating at 50mA
![2SC5865TLR](/img/package/mt200.jpg)
2SC5865TLR
Bipolar transistors NPN 60V 1A
![2SC5824T100R](/img/package/sot89.jpg)
2SC5824T100R
3A I(C) 60V V(BR)CEO 1-Element NPN Silicon
![2SB1561T100Q](/img/package/to3.jpg)
2SB1561T100Q
60V 2W 120@500mA 2V 2A Bipolar Transistors - BJT
![2SB1316TL](/img/package/dpak2.jpg)
2SB1316TL
ROHS Compliant Transistor
![IRG4BC20KDPBF](/img/package/to220.jpg)
IRG4BC20KDPBF
N-channel IGBT Semiconductor Chip, 600V, 16A, 60,000mW, TO-220AB Package
![CM100TU-12F](/img/package/module.jpg)
CM100TU-12F
CM100TU-12F Trans IGBT Module
![ZXTN25012EFHTA](/img/package/sot23.jpg)
ZXTN25012EFHTA
SOT-23 ZXTN250 Series NPN Transistor with 1.25 W Power, 12 V Voltage, 6 A Current
![DN2625K4-G](/img/package/dpak.jpg)
DN2625K4-G
Trans MOSFET N-CH Si 250V 1.1A 3-Pin(2+Tab) DPAK T/R
![MMBF4392LT1G](/img/package/sot23.jpg)
MMBF4392LT1G
The N-channel JFET device, MMBF4392LT1G, prioritizes functionality in analog switching and chopper applications
![FZT751TA](/files/uploads/product/s/fa0d7e284f7049d7886abccc5a534dc4.webp)
FZT751TA
Product FZT751TA is a Transistor General Purpose Bipolar Junction PNP with a maximum voltage rating of 60V and a current handling capability of 3A
![DRC2114Y0L](/img/package/sot23.jpg)
DRC2114Y0L
Bipolar transistors with integrated resistor gatewing, pre-biased, 2.9mm x 2.8mm
![IRLH5030TRPBF](/img/package/pqfn8.jpg)
IRLH5030TRPBF
MOSFET transistor with N-channel, 100V capacity, 9mOhms resistance, and 44nC gate charge
![CGHV27015S](/img/package/dfn12.jpg)
CGHV27015S
Ideal for high-frequency applications
![BSC360N15NS3GATMA1](/img/package/son8.jpg)
BSC360N15NS3GATMA1
High Charge of 15nC