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2SB1198KT146R

The 2SB1198KT146R transistor is designed for a maximum voltage of 80V and can handle a power dissipation of 200mW when operating at 100mA

Quantity Unit Price(USD) Ext. Price
5 $0.087 $0.44
50 $0.077 $3.85
150 $0.071 $10.65
500 $0.068 $34.00
3000 $0.065 $195.00
6000 $0.063 $378.00

Inventory:4,764

*The price is for reference only.
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Overview of 2SB1198KT146R

Bipolar (BJT) Transistor PNP 80 V 500 mA 180MHz 200 mW Surface Mount SMT3

Key Features

  • 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA)
  • 2) High breakdown voltage. BVCEO = 80V
  • 3) Complements the 2SD1782K.

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer ROHM Semiconductor Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 80 V Configuration SINGLE
DC Current Gain-Min (hFE) 180 JESD-30 Code R-PDSO-G3
JESD-609 Code e1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 180 MHz VCEsat-Max 0.5 V

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