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IRF6648TR1PBF

Product Name: IRF6648TR1PBF - Description: N-Channel 60V 86A Surface Mount DIRECTFET™ MN

Inventory:6,254

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Overview of IRF6648TR1PBF

The IRF6648TR1PBF is a power MOSFET transistor designed for high-efficiency synchronous rectification in power supply applications. It features a low on-state resistance and fast switching speed, making it ideal for use in DC-DC converters and motor control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF6648TR1PBF MOSFET for a visual representation.

Key Features

  • High Efficiency: The IRF6648TR1PBF offers high efficiency in power conversion applications, reducing power losses.
  • Low On-State Resistance: With a low RDS(on), this MOSFET minimizes power dissipation and improves thermal performance.
  • Fast Switching Speed: The fast switching characteristics of the IRF6648TR1PBF contribute to overall system performance.
  • Compact Size: Available in a compact and space-saving package, suitable for applications with size constraints.
  • Wide Operating Voltage Range: Supports a broad range of operating voltages, enhancing versatility in different circuit designs.

Note: For detailed technical specifications, please refer to the IRF6648TR1PBF datasheet.

Application

  • DC-DC Converters: Ideal for use in synchronous rectification for efficient power conversion.
  • Motor Control: Suitable for motor control circuits, offering fast switching capabilities for improved performance.
  • Power Supplies: Used in various power supply applications to regulate and convert electrical power efficiently.

Functionality

The IRF6648TR1PBF MOSFET is designed to deliver high efficiency and fast switching characteristics, making it a reliable choice for power supply and motor control applications.

Usage Guide

  • Gate Drive: Provide appropriate gate drive signals to control the switching of the MOSFET.
  • Heat Management: Ensure adequate heat sinking and thermal management to maintain proper operation and reliability.
  • Voltage Ratings: Adhere to voltage ratings specified in the datasheet to prevent damage to the MOSFET.

Frequently Asked Questions

Q: Can the IRF6648TR1PBF be used in high-frequency applications?
A: Yes, the fast switching speed of the IRF6648TR1PBF makes it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IRF6648TR1PBF:

  • IRF7748TR1PBF: A power MOSFET with similar specifications and performance characteristics to the IRF6648TR1PBF.
  • IRF6348TR1PBF: This MOSFET offers comparable efficiency and switching speed for power supply applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HEXFET® Product Status Obsolete
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 25 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MN
Package / Case DirectFET™ Isometric MN

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