• SPB80P06PG TO263
SPB80P06PG TO263

SPB80P06PG

Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Quantity Unit Price(USD) Ext. Price
1 $4.424 $4.42
10 $3.905 $39.05
30 $3.597 $107.91
100 $3.285 $328.50
500 $3.141 $1,570.50
1000 $3.076 $3,076.00

Inventory:5,040

*The price is for reference only.
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  • Part Number : SPB80P06PG

  • Package/Case : TO263

  • Brands : Infineon Technologies AG

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : SPB80P06PG DataSheet (PDF)

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Overview of SPB80P06PG

The SPB80P06PG is a P-channel enhancement mode power field-effect transistor (FET) designed for high-power applications. This transistor features a low ON-resistance and high load current capability, making it ideal for power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate (Control)
  • S: Source (Current Supply)
  • D: Drain (Output)

Circuit Diagram

Include a circuit diagram illustrating the connections and usage of the SPB80P06PG FET for a visual representation.

Key Features

  • P-Channel Enhancement Mode FET: The SPB80P06PG is a P-channel FET that operates in enhancement mode for efficient power management.
  • Low ON-Resistance: This transistor offers a low ON-resistance, reducing power loss and improving efficiency in high-current applications.
  • High Load Current Capability: With its high load current capacity, the SPB80P06PG can handle significant power requirements in electronic circuits.
  • High Power Dissipation: The SPB80P06PG is designed to dissipate heat effectively, ensuring stable performance under high-power conditions.
  • Fast Switching Speed: This FET provides fast switching characteristics, enabling quick response times in power control applications.

Note: For detailed technical specifications, please refer to the SPB80P06PG datasheet.

Application

  • Power Management: Ideal for power management functions in amplifiers, power supplies, motor control circuits, and other high-power applications.
  • Switching Circuits: Suitable for use in electronic switching circuits where high current and low ON-resistance are critical.
  • Voltage Regulation: The SPB80P06PG can be employed in voltage regulation circuits to maintain stable power output levels.

Functionality

The SPB80P06PG P-channel FET is utilized for switching and amplification tasks in electronic circuits. It offers efficient power handling capabilities and reliable performance for various power management applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate (G) terminal to control the flow of current between the source (S) and drain (D).
  • Load Connection: Connect the load to the drain terminal (D) while ensuring proper source (S) and gate (G) connections.
  • Heat Dissipation: Provide adequate heat sinking or cooling mechanisms to manage the thermal performance of the FET.

Frequently Asked Questions

Q: Can the SPB80P06PG be used in automotive applications?
A: Yes, the SPB80P06PG is suitable for automotive electronics, provided it meets the required specifications for the application.

Equivalent

For alternative solutions with similar characteristics, consider the following alternatives to the SPB80P06PG:

  • FQP27P06: A P-channel MOSFET with comparable specifications suitable for high-power applications.
  • IRF4905: This P-channel power MOSFET offers similar characteristics to the SPB80P06PG and can be used as an alternative.

SPB80P06PG

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Unconfirmed
SVHC Yes SVHC Exceeds Threshold Yes
Automotive Yes Category Power MOSFET
Configuration Single Process Technology SIPMOS
Channel Mode Enhancement Channel Type P
Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 60
Maximum Gate Source Voltage (V) ±20 Maximum Continuous Drain Current (A) 80
Maximum Drain Source Resistance (MOhm) 23@10V Typical Gate Charge @ Vgs (nC) 115@10V
Typical Gate Charge @ 10V (nC) 115 Typical Input Capacitance @ Vds (pF) 4026@25V
Maximum Power Dissipation (mW) 340000 Typical Fall Time (ns) 30
Typical Rise Time (ns) 18 Typical Turn-Off Delay Time (ns) 56
Typical Turn-On Delay Time (ns) 24 Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175 Supplier Temperature Grade Automotive
Packaging Tape and Reel Mounting Surface Mount
Package Height 4.4 Package Width 9.25
Package Length 10 PCB changed 2
Tab Tab Standard Package Name TO-263
Supplier Package D2PAK Pin Count 3
Lead Shape Gull-wing

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