SI4435DYTRPBF
MOSFET HEXFET P-CH Low 0.020 Ohm -30V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.735 | $0.74 |
10 | $0.608 | $6.08 |
30 | $0.543 | $16.29 |
100 | $0.481 | $48.10 |
500 | $0.423 | $211.50 |
1000 | $0.405 | $405.00 |
Inventory:6,177
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Part Number : SI4435DYTRPBF
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Package/Case : 8-SOIC(0.154",3.90mmWidth)
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Brands : Infineon Technologies
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Components Categories : Single FETs, MOSFETs
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Datesheet : SI4435DYTRPBF DataSheet (PDF)
The SI4435DYTRPBF is an N-channel MOSFET transistor designed for high-frequency switching applications in power management circuits and voltage regulation systems. This MOSFET features a low on-state resistance and high switching speed, making it suitable for efficient power handling and control. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI4435DYTRPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SI4435DYTRPBF datasheet. Functionality The SI4435DYTRPBF N-channel MOSFET transistor is designed to efficiently switch high power loads with low resistance and high speed. It is a reliable component for power management and voltage control systems. Usage Guide Q: Can the SI4435DYTRPBF be used in high-frequency switching applications? For similar functionalities, consider these alternatives to the SI4435DYTRPBF:Overview of SI4435DYTRPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI4435DYTRPBF is designed for high-speed switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | HEXFET® | Product Status | Active |
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 15 V |
Power Dissipation (Max) | 2.5W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | Base Product Number | SI4435 |
Warranty & Returns
Warranty, Returns, and Additional Information
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Returns for refund: within 90 days
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Package: Small Outline-8 (SO-8)