SI2319DS-T1-E3
Surface-mount device in SOT23 package
Inventory:9,503
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Part Number : SI2319DS-T1-E3
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Package/Case : SOT-23-3
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Brands : Vishay
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Components Categories : Single FETs, MOSFETs
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Datesheet : SI2319DS-T1-E3 DataSheet (PDF)
The SI2319DS-T1-E3 is a P-channel enhancement mode field-effect transistor (FET) designed for use in various electronic applications. This transistor offers high current handling capabilities and low ON-resistance, making it suitable for power management and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI2319DS-T1-E3 FET for a visual representation. Note: For detailed technical specifications, please refer to the SI2319DS-T1-E3 datasheet. Functionality The SI2319DS-T1-E3 FET is designed to regulate current flow and act as a switch in electronic circuits. It offers efficient power handling and reliable performance in power management applications. Usage Guide Q: Is the SI2319DS-T1-E3 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the SI2319DS-T1-E3:Overview of SI2319DS-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI2319DS-T1-E3 offers fast switching speeds and is suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 3 A | Rds On - Drain-Source Resistance | 82 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 17 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 25 ns |
Forward Transconductance - Min | 7 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 15 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 7 ns |
Width | 1.6 mm | Part # Aliases | SI2319DS-T1-BE3 SI2319DS-E3 |
Unit Weight | 0.000282 oz |
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