• RFG60P06E TO-247-3
RFG60P06E TO-247-3

RFG60P06E

60A, 60V, 0.03ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

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Overview of RFG60P06E

The RFG60P06E is a Power MOSFET transistor designed for high-power switching applications.This MOSFET features a low on-resistance and high current capability,making it suitable for use in power supplies,motor control, and inverters.

Pinout

(Note: The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • B: Body

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RFG60P06E MOSFET for a visual representation.

Key Features

  • High Power Handling: The RFG60P06E MOSFET can handle high power levels, making it suitable for demanding applications.
  • Low On-Resistance: This MOSFET has a low on-resistance, reducing power losses and improving efficiency.
  • Fast Switching Speed: With its fast switching characteristics, the RFG60P06E enables rapid switching transitions in circuits.
  • High Voltage Capability: The RFG60P06E can withstand high voltage levels, allowing for use in high-voltage applications.
  • Thermal Stability: Designed for thermal stability, this MOSFET can operate reliably under varying temperature conditions.

Note: For detailed technical specifications, please refer to the RFG60P06E datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits to regulate and control power output.
  • Motor Control: Suitable for motor control applications in industries such as robotics and automation.
  • Inverters: Used in inverter circuits to convert DC power to AC power for various applications.

Functionality

The RFG60P06E Power MOSFET is a reliable and efficient transistor for high-power switching applications, offering low on-resistance and high current handling capabilities.

Usage Guide

  • Connection: Connect the Gate (G), Source (S), and Drain (D) pins as per the circuit requirements.
  • Drive Voltage: Apply the appropriate gate-source voltage to turn the MOSFET on and off effectively.
  • Heat Dissipation: Ensure proper heat sinking or thermal management to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: Is the RFG60P06E suitable for high-frequency switching applications?
A: Yes, the RFG60P06E offers fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the RFG60P06E:

  • IRF3205: A Power MOSFET with comparable performance characteristics suitable for high-power applications.
  • BUF420AW: This is another Power MOSFET transistor offering similar power handling capabilities for demanding applications.

RFG60P06E

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Mounting Style Through Hole
Package / Case TO-247-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 60 A Rds On - Drain-Source Resistance 30 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 215 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 20 ns
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Rise Time 60 ns
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 65 ns Typical Turn-On Delay Time 20 ns
Width 4.82 mm Unit Weight 0.211644 oz

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