IRF9640PBF
P-MOSFET transistor, unipolar, -200V, -6.8A, 125W, TO220AB
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.583 | $0.58 |
10 | $0.475 | $4.75 |
50 | $0.422 | $21.10 |
100 | $0.369 | $36.90 |
500 | $0.336 | $168.00 |
1000 | $0.320 | $320.00 |
Inventory:7,484
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Part Number : IRF9640PBF
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Package/Case : TO-220-3
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Brands : Vishay
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Components Categories : Single FETs, MOSFETs
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Datesheet : IRF9640PBF DataSheet (PDF)
The IRF9640PBF is a P-Channel MOSFET transistor designed for high-power applications in electronic circuits. This MOSFET features a low on-resistance and high drain-source voltage rating, making it suitable for power management and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRF9640PBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRF9640PBF datasheet. Functionality The IRF9640PBF P-Channel MOSFET is designed to control high-power circuits by efficiently switching power with low on-resistance. It is a reliable component for various electronic applications requiring P-Channel MOSFET characteristics. Usage Guide Q: Can the IRF9640PBF be used in high-frequency applications? For similar functionalities, consider these alternatives to the IRF9640PBF:Overview of IRF9640PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF9640PBF can be used in high-frequency applications, but it is important to consider the switching characteristics and drive requirements.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 11 A |
Rds On - Drain-Source Resistance | 500 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 44 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 125 W | Channel Mode | Enhancement |
Series | IRF | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 38 ns |
Product Type | MOSFET | Rise Time | 43 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 39 ns |
Typical Turn-On Delay Time | 14 ns | Part # Aliases | IRF9640PBF-BE3 |
Unit Weight | 0.068784 oz |
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