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NTHL040N120SC1

Trans MOSFET N-CH SiC 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube

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Please submit RFQ for NTHL040N120SC1 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NTHL040N120SC1

The NTHL040N120SC1 is a Silicon Carbide (SiC) MOSFET from EliteSiC, featuring a low on-resistance of 40 mohm and a high voltage rating of 1200 V. This makes it suitable for high-power applications where efficiency and low switching losses are essential. The TO-247-3L package allows for easy mounting and efficient heat dissipation

Key Features

  • Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested

Application

  • PFC
  • Boost Inverter
  • PV Charging

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology SiC
Mounting Style Through Hole Package / Case TO-247-3LD
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 56 mOhms Vgs - Gate-Source Voltage - 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4.3 V Qg - Gate Charge 106 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 348 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 10.4 ns Forward Transconductance - Min 20 S
Product Type MOSFET Rise Time 41 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Typical Turn-Off Delay Time 33 ns Typical Turn-On Delay Time 18 ns
Unit Weight 0.427403 oz

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