NST30010MXV6T1G
Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R
Inventory:5,068
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : NST30010MXV6T1G
-
Package/Case : SOT-563
-
Brands : onsemi
-
Components Categories : Bipolar Transistors - BJT
-
Datesheet : NST30010MXV6T1G DataSheet (PDF)
Overview of NST30010MXV6T1G
The Dual PNP Bipolar Transistor is housed in an ultra-small SOT-563 package ideally suited for portable products. It is assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors, Differential Sense and Balanced Amplifiers, Mixers, Detectors and Limiters.
Key Features
- Current Gain Matching to 10%
- Base-Emitter Voltage Matched to 2 mV
- Drop-In Replacement for Standard Device
- These are Pb-Free Devices
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Application
- Current Mirror
- Differential Amplifier
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category | Bipolar Transistors - BJT |
RoHS | Details | Mounting Style | SMD/SMT |
Package / Case | SOT-563-6 | Transistor Polarity | PNP |
Configuration | Dual | Collector- Emitter Voltage VCEO Max | 30 V |
Collector- Base Voltage VCBO | 30 V | Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 600 mV | Maximum DC Collector Current | 100 mA |
Pd - Power Dissipation | 661 mW | Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | NST30010MXV6 | Brand | onsemi |
Continuous Collector Current | 100 mA | DC Collector/Base Gain hfe Min | 270 at 10 uA, 5 V, 420 at 2 mA, 5 V |
Height | 0.55 mm | Length | 1.6 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 4000 |
Subcategory | Transistors | Technology | Si |
Width | 1.2 mm | Unit Weight | 0.000106 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
BSC077N12NS3 G
MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
NSS60600MZ4T1G
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
BSZ16DN25NS3G
N-Channel 250 V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
STP70NS04ZC
Trans MOSFET N-CH 33V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
NSS1C301ET4G
Surface Mount NPN Bipolar Transistor with 100V Voltage Rating
NSS1C201LT1G
Small Signal NPN Bipolar Transistor, TO-236 Package, 2A Collector Current, 100V Collector-Emitter Breakdown Voltage
NSS1C200LT1G
PNP Bipolar Junction Transistor (BJT) designed for General Purpose Applications with a Maximum Voltage Rating of 100V and Current Rating of 2A
HGT1S10N120BNST
Insulated Gate Bipolar Transistor, 1200V, Non-Punch Through