• NSS60600MZ4T1G SOT-223
NSS60600MZ4T1G SOT-223

NSS60600MZ4T1G

Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R

Inventory:9,020

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  • Part Number : NSS60600MZ4T1G

  • Package/Case : SOT-223

  • Brands : onsemi

  • Components Categories : Bipolar Transistors - BJT

  • Datesheet : NSS60600MZ4T1G DataSheet (PDF)

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Overview of NSS60600MZ4T1G

The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.

Key Features

  • Low Collector-Emitter Saturation Voltage
  • High DC Current Gain
  • High Current-Gain Bandwidth Product
  • Superior gain linearity
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Application

  • Linear voltage regulation
  • Power management for portable devices
  • Switching regulator
  • Inductive load driver (e.g. motors, fans, relays)
  • Linear controls

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Package / Case SOT-223-4 Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 60 V
Collector- Base Voltage VCBO 100 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 350 mV Maximum DC Collector Current 6 A
Pd - Power Dissipation 2 W Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series NSS60600 Brand onsemi
DC Collector/Base Gain hfe Min 150 Height 1.57 mm
Length 6.5 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Width 3.5 mm
Unit Weight 0.003951 oz

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