• IRG4PH50UPBF
IRG4PH50UPBF

IRG4PH50UPBF

Trans IGBT Chip N-CH 1200V 45A 200W 3-Pin(3+Tab) TO-247AC Tube

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Overview of IRG4PH50UPBF

IGBT 1200 V 45 A 200 W Through Hole TO-247AC

IRG4PH50UPBF

Key Features

  • High Voltage Handling: Capable of handling high voltage levels.
  • Fast Switching Speed: Offers fast switching for efficient power control.
  • Low Saturation Voltage: Reduces power loss during operation.
  • Dual Collector Terminals: Allows for additional current handling capacity.

Note: Comprehensive technical details can be available in the IRG4PH50UPBF datasheet.

Application

  • Power Inverters: Used in inverters for converting DC to AC power.
  • Motor Drives: Applied in motor control circuits for efficient speed and direction control.
  • Switching Power Supplies: Integrated into circuits for power supply applications.


Functionality


The IRG4PH50UPBF operates as a high-voltage, high-current switch, allowing efficient control of power flow in electronic circuits.


Equivalents/Alternatives


IRG4PH50U: Similar IGBT transistor with similar specifications.
IXGH40N60B: Alternative IGBT transistor suitable for similar applications.


Usage Guide

  • Refer to the official datasheet for comprehensive technical details.
  • Connect the transistor pins according to the provided pin configuration for the desired power electronics application.
  • Implement suitable gate drive circuitry for precise control.

Frequently Asked Questions


Q: What is the maximum voltage rating of the IRG4PH50UPBF?
A: Refer to the datasheet for information on the maximum voltage rating.


Q: How to calculate power loss in the IGBT?
A: Consult the datasheet for guidelines on calculating power loss under different operating conditions.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRG4PH50UPBF Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS Case Connection COLLECTOR
Collector Current-Max (IC) 45 A Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE Fall Time-Max (tf) 500 ns
Gate-Emitter Thr Voltage-Max 6 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 49 ns

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