IRLB8743PBF
IRLB8743PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon
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Part Number : IRLB8743PBF
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Package/Case : TO-220AB
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Brands : International Rectifier
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRLB8743PBF DataSheet (PDF)
The IRLB8743PBF is a power MOSFET transistor designed for high-power switching applications.This N-channel MOSFET features a low on-resistance and high current-handling capability,making it ideal for use in power supplies,motor control, and other high-power electronics. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and usage of the IRLB8743PBF MOSFET for a visual representation. Note:For detailed technical specifications, please refer to the IRLB8743PBF datasheet. Functionality The IRLB8743PBF MOSFET is a high-performance transistor that allows for efficient power switching in a variety of high-power electronic applications. Usage Guide Q:Can the IRLB8743PBF be used in automotive applications? For similar functionalities, consider these alternatives to the IRLB8743PBF:Overview of IRLB8743PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:Yes, the IRLB8743PBF is suitable for automotive applications where high-power switching is required.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IRLB8743PBF | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 310 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 78 A |
Drain-source On Resistance-Max | 0.0032 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 620 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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