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IRF7822PBF

MOSFET 30V 1 N-CH HEXFET 6.5mOhms 44nC

Inventory:6,555

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Overview of IRF7822PBF

The IRF7822PBF is a cutting-edge dual N-channel Power MOSFET that excels in low voltage, high speed switching applications. With a remarkably low on-resistance of 5.7mOhm at a Vgs of 10V, this MOSFET delivers exceptional performance in high efficiency power conversion circuits. Its impressive maximum drain-source voltage of 30V and continuous drain current of 40A make it a reliable choice for demanding industrial applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HEXFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 5 V Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 16 V Power Dissipation (Max) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number IRF7822

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