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FSB660A

Bipolar Transistors - BJT PNP Transistor Low Saturation

Inventory:5,805

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  • Part Number : FSB660A

  • Package/Case : TO-236-3,SC-59,SOT-23-3

  • Brands : onsemi

  • Components Categories : Single Bipolar Transistors

  • Datesheet : FSB660A DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FSB660A or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FSB660A

These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous.

Key Features

  • -PNP transistor
  • -Surface mount mounting type
  • -SMD/SMT mounting style
  • -Emitter-base voltage of 5V
  • -Vce saturation of 300mV @ 200mA, 2A
  • -Current collector cutoff max of 100nA (ICBO)
  • -Packaged in a Digi-ReelR Alternate Packaging
  • -Unit weight of 0.001058 oz

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type PNP
Current - Collector (Ic) (Max) 2 A Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA, 2V Power - Max 500 mW
Frequency - Transition 75MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 Base Product Number FSB660

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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