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FQU13N10LTU

Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Tube

Inventory:8,565

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Overview of FQU13N10LTU

The FQU13N10LTU is a cutting-edge N-Channel enhancement mode power MOSFET designed with precision and efficiency in mind. Crafted using ON Semiconductor's proprietary planar stripe and DMOS technology, this MOSFET boasts unparalleled performance capabilities. With a focus on reducing on-state resistance and delivering superior switching performance, this device is ideal for a wide range of applications

Key Features

  • 10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A
  • Low Gate Charge ( Typ. 9.5nC)
  • Low Crss ( Typ. 35pF)
  • 100% Avalanche Tested
  • Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers

Application

  • LED TV

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series QFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number FQU13N10

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

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