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FQPF10N60CT

MOSFET N-CH/600V/10A QFET C-Series

Inventory:6,849

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Overview of FQPF10N60CT

The TO-220 package in which the FQPF10N60CT is housed provides excellent thermal performance and ease of mounting on a heatsink, further enhancing its reliability in demanding operating conditions. With a maximum operating temperature of 175°C, this MOSFET can withstand high temperatures, ensuring long-term reliability and performance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series QFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 4.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 25 V Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220F-3 Package / Case TO-220-3 Full Pack
Base Product Number FQPF1

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