FQPF6N80
MOSFET 800V N-Channel QFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.676 | $0.68 |
200 | $0.261 | $52.20 |
500 | $0.252 | $126.00 |
1000 | $0.249 | $249.00 |
Inventory:6,014
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : FQPF6N80
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Package/Case : TO-220-3FullPack
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Brands : onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FQPF6N80 DataSheet (PDF)
Overview of FQPF6N80
N-Channel 800 V 3.3A (Tc) 51W (Tc) Through Hole TO-220F-3
Key Features
- 3.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
- Low gate charge ( typical 31 nC)
- Low Crss ( typical 14 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | QFET® | Package | Tube |
Product Status | Obsolete | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.95Ohm @ 1.65A, 10V | Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V | Power Dissipation (Max) | 51W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 | Package / Case | TO-220-3 Full Pack |
Base Product Number | FQPF6 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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