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FQA10N80C

MOSFET 800V N-Ch advance QFET

Quantity Unit Price(USD) Ext. Price
1 $1.525 $1.52
200 $0.591 $118.20
500 $0.569 $284.50
1000 $0.561 $561.00

Inventory:8,349

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for FQA10N80C or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FQA10N80C

N-Channel 800 V 10A (Tc) 240W (Tc) Through Hole TO-3P

Key Features

  • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V
  • Low gate charge ( typical 44 nC)
  • Low Crss ( typical 15pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-3PN-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 10 A Rds On - Drain-Source Resistance 1.1 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 240 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 80 ns
Forward Transconductance - Min 5.8 S Height 20.1 mm
Length 16.2 mm Product Type MOSFET
Rise Time 130 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 90 ns
Typical Turn-On Delay Time 50 ns Width 5 mm
Part # Aliases FQA10N80C_NL Unit Weight 0.162260 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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