FGD3N60LSDTM
Trans IGBT Chip N-CH 600V 6A 40W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Inventory:5,636
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Part Number : FGD3N60LSDTM
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Package/Case : TO-252-3,DPak(2Leads+Tab),SC-63
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Brands : onsemi
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Components Categories : Single IGBTs
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Datesheet : FGD3N60LSDTM DataSheet (PDF)
Overview of FGD3N60LSDTM
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
Key Features
- High Current Capability
- Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A
- High Input Impedance
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 6 A | Current - Collector Pulsed (Icm) | 25 A |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 10V, 3A | Power - Max | 40 W |
| Switching Energy | 250µJ (on), 1mJ (off) | Input Type | Standard |
| Gate Charge | 12.5 nC | Td (on/off) @ 25°C | 40ns/600ns |
| Test Condition | 480V, 3A, 470Ohm, 10V | Reverse Recovery Time (trr) | 234 ns |
| Mounting Type | Surface Mount | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA | Base Product Number | FGD3N60 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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