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FDT457N

MOSFET SOT-223 N-CH 30V

Inventory:5,413

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Overview of FDT457N

Designed for N Channel applications, the FDT457N MOSFET offers exceptional performance in a compact package. With a maximum drain source voltage of 30V and a continuous drain current of 5A, it can tackle demanding tasks with ease. The on resistance of 60mohm at a test voltage of 10V ensures efficient operation. Housed in a space-saving SOT-223 package and RoHS compliant, this MOSFET is both practical and environmentally friendly

Key Features

  • 5 A, 30 V
    RDS(ON) = 0.06 Ω @ VGS = 10 V
    RDS(ON) = 0.090 Ω @ VGS = 4.5 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 15 V Power Dissipation (Max) 3W (Ta)
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package SOT-223-4 Package / Case TO-261-4, TO-261AA
Base Product Number FDT457

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