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FDP16N50

MOSFET 500V 16A NCH MOSFET

Quantity Unit Price(USD) Ext. Price
1 $1.326 $1.33
200 $0.514 $102.80
500 $0.496 $248.00
1000 $0.486 $486.00

Inventory:8,542

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for FDP16N50 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDP16N50

N-Channel 500 V 16A (Tc) 200W (Tc) Through Hole TO-220-3

Key Features

  • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
  • Low gate charge ( typical 32 nC)
  • Low Crss ( typical 20 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series UniFET™ Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 8A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1945 pF @ 25 V Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220-3 Package / Case TO-220-3

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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