• packageimg
packageimg

FDMS8090

Trans MOSFET N-CH 100V 10A 8-Pin Power 56 T/R

Inventory:5,969

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : FDMS8090

  • Package/Case : Power-56-8

  • Brands : onsemi

  • Components Categories : FET, MOSFET Arrays

  • Datesheet : FDMS8090 DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FDMS8090 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDMS8090

This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.

Key Features

  • Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A
  • Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • 100% UIL tested
  • RoHS Compliant

Application

  • DC-DC Merchant Power Supply

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series FDMS8090 Product Status Active
Technology Si Configuration Dual
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V Power - Max 2.2W
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Package / Case Power-56-8 Supplier Device Package 8-MLP (5x6), Power56
Base Product Number FDMS80 Manufacturer onsemi
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 10 A, 8 A Rds On - Drain-Source Resistance 13 mOhms, 20 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 27 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 59 W
Channel Mode Enhancement Tradename Power Stage PowerTrench
Brand onsemi / Fairchild Fall Time 4 ns
Forward Transconductance - Min 24 S Height 0.8 mm
Length 6 mm Product MOSFETs
Product Type MOSFET Rise Time 4.6 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 17.4 ns
Typical Turn-On Delay Time 10.6 ns Width 5 mm
Unit Weight 0.008818 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

FDC3535

FDC3535

FDC3535 MOSFET with PowerTrench design, -80V rating
FDW2520C

FDW2520C

MOSFET FDW2520C PowerTrench
FDPF7N50U

FDPF7N50U

Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220F Rail
FDPF10N60NZ

FDPF10N60NZ

Sold in a tube containing 1000 units for bulk purchasing options
DMP4047LFDE-7

DMP4047LFDE-7

Product DMP4047LFDE-7 is a P Channel MOSFET with a voltage rating of 40V and a current rating of 3.3A
IPW65R080CFD

IPW65R080CFD

Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor
FDD4685

FDD4685

channel power field effect transistor, 8.4A, 40V, 0.042ohm, mosfet
FDC6561AN

FDC6561AN

MOSFET SSOT-6 N-CH 30V