FDMB668P
Trans MOSFET P-CH 20V 6.1A 8-Pin MicroFET T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.276 | $0.28 |
| 200 | $0.107 | $21.40 |
| 500 | $0.103 | $51.50 |
| 1000 | $0.101 | $101.00 |
Inventory:6,671
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : FDMB668P
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Package/Case : 8-PowerWDFN
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Brands : Fairchild Semiconductor
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Components Categories : Single FETs, MOSFETs
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Datesheet : FDMB668P DataSheet (PDF)
Overview of FDMB668P
The FDMB668P power MOSFET transistor is a powerhouse in the world of high efficiency power management. With a drain-source voltage of -60V and a continuous drain current of -39A, this P-channel MOSFET is built to handle heavy-duty power applications with ease. Its ultra-low on-resistance of 8.5mOhm at a gate-source voltage of -10V ensures that power switching is not only efficient but also minimizes power losses significantly
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | PowerTrench® | Package | Bulk |
| Product Status | Obsolete | FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.1A, 4.5V | Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 10 V | Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) | Package / Case | 8-PowerWDFN |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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