FDD6N25TM
MOSFET 250V N-CH MOSFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.547 | $0.55 |
10 | $0.453 | $4.53 |
30 | $0.407 | $12.21 |
100 | $0.361 | $36.10 |
500 | $0.306 | $153.00 |
1000 | $0.291 | $291.00 |
Inventory:6,853
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : FDD6N25TM
-
Package/Case : TO-252-3
-
Brands : onsemi
-
Components Categories : Single FETs, MOSFETs
-
Datesheet : FDD6N25TM DataSheet (PDF)
Overview of FDD6N25TM
With its cutting-edge design and innovative features, the FDD6N25TM UniFETTM MOSFET sets a new standard for high voltage MOSFETs. Built using advanced planar stripe and DMOS technology, this MOSFET is engineered to minimize on-state resistance and improve switching performance, making it an ideal choice for demanding power converter applications. Its high avalanche energy strength further enhances its reliability and longevity, ensuring consistent performance in applications such as power factor correction, flat panel display TV power, ATX units, and electronic lamp ballasts. Trust the FDD6N25TM MOSFET to deliver unparalleled efficiency and durability in high voltage scenarios
Key Features
- RDS(on) = 1.1Ω ( Max.)@ VGS = 10V, ID = 2.2A
- Low gate charge ( Typ. 4.5nC)
- Low Crss ( Typ. 5pF)
- 100% avalanche tested
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | UniFET™ | Product Status | Obsolete |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250 V | Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
Power Dissipation (Max) | 50W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Base Product Number | FDD6N25 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
DMP4047LFDE-7
Product DMP4047LFDE-7 is a P Channel MOSFET with a voltage rating of 40V and a current rating of 3.3A
IPW65R080CFD
Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor
FDC6561AN
MOSFET SSOT-6 N-CH 30V
FDC6327C
SuperSOT package with 6 pins
FDC604P
MOSFET SSOT-6 P-CH
FDC3535
FDC3535 MOSFET with PowerTrench design, -80V rating
FDP12N60NZ
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
FDS4141
Trans MOSFET P-CH 40V 10.8A 8-Pin SOIC T/R