• DMN63D8LW-13
DMN63D8LW-13

DMN63D8LW-13

Enhancement Mode N-Channel MOSFET featuring 30V VDS and 20±V VGS

Inventory:6,770

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for DMN63D8LW-13 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of DMN63D8LW-13

Transistors - FETs, MOSFETs - Single 1 (Unlimited) SC-70, SOT-323 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8 Ω @ 250mA, 10V 380mA Ta -55°C~150°C TJ MOSFET N-CH 30V 0.38A SOT323

DMN63D8LW-13

Key Features

  • Low On-Resistance: RDS(ON)
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 standards for High Reliability

Application

SWITCHING
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 380 mA Rds On - Drain-Source Resistance 2.8 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 900 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 420 mW
Channel Mode Enhancement Series DMN63
Brand Diodes Incorporated Configuration Single
Fall Time 16.7 ns Forward Transconductance - Min 80 mS
Product Type MOSFET Rise Time 3.9 ns
Factory Pack Quantity 10000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 11.4 ns
Typical Turn-On Delay Time 2.3 ns Unit Weight 0.000212 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

DMP6023LE-13

DMP6023LE-13

DMP6023LE-13 MOSFET transistor from Diodes Inc
DMP4051LK3-13

DMP4051LK3-13

TO-252-3 packaged MOSFET featuring P-channel polarity suitable for -40V drain-source voltage and -7.2A continuous drain current
DMP3056L-7

DMP3056L-7

Can handle a maximum current of 4.3A, making it suitable for medium power applications
DMP3099L-7

DMP3099L-7

SOT23 Package Enhancement Mode
DMN5L06K-7

DMN5L06K-7

SOT23 Diodes Inc DMN5L06K-7 N-Channel MOSFET
DMN32D2LDF-7

DMN32D2LDF-7

SOT-353 0.4A 30V Dual N-channel
DMP2035U-7

DMP2035U-7

The DMP2035U-7 is a P-channel MOSFET designed to handle a maximum voltage of 20V and a current of 4
DMG2305UX-13

DMG2305UX-13

The DMG2305UX-13 MOSFET operates as a P-channel device with a maximum continuous drain current of -4