DMG2302UK-7
MOSFET MOSFET BVDSS: 8V-24V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.041 | $0.41 |
100 | $0.036 | $3.60 |
300 | $0.033 | $9.90 |
3000 | $0.031 | $93.00 |
6000 | $0.029 | $174.00 |
9000 | $0.028 | $252.00 |
Inventory:8,495
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Part Number : DMG2302UK-7
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Package/Case : SOT23-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : DMG2302UK-7 DataSheet (PDF)
The DMG2302UK-7 is a P-channel enhancement-mode MOSFET transistor designed for various electronic applications. This transistor offers high performance and reliability in a compact package, making it suitable for a wide range of circuit designs. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram that illustrates the connections and operation of the DMG2302UK-7 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the DMG2302UK-7 datasheet. Functionality The DMG2302UK-7 is a P-channel enhancement-mode MOSFET transistor that provides reliable switching and amplification capabilities in electronic circuits. Usage Guide Q: Is the DMG2302UK-7 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the DMG2302UK-7:Overview of DMG2302UK-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, this MOSFET is suitable for high-frequency applications due to its fast switching characteristics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 2.8 A | Rds On - Drain-Source Resistance | 90 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 300 mV |
Qg - Gate Charge | 1.4 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 660 mW |
Channel Mode | Enhancement | Brand | Diodes Incorporated |
Configuration | Single | Fall Time | 1.7 ns |
Product Type | MOSFET | Rise Time | 2.7 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 4.2 ns |
Typical Turn-On Delay Time | 0.6 ns | Unit Weight | 0.000282 oz |
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Warranty, Returns, and Additional Information
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